Recent development of fabrication technologies of nitride LEDs for performance improvement

Ray Hua Horng; Dong Sing Wuu; Chia Feng Lin; Chun Feng Lai

doi:10.1016/B978-0-08-101942-9.00006-X

Recent development of fabrication technologies of nitride LEDs for performance improvement

Ray Hua Horng^*, Dong Sing Wuu, Chia Feng Lin, Chun Feng Lai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

4 Scopus citations

Abstract

In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns, and polarization properties of GaN PC TFLEDs.

Original language	English
Title of host publication	Nitride Semiconductor Light-Emitting Diodes (LEDs)
Subtitle of host publication	Materials, Technologies, and Applications: Second Edition
Publisher	Elsevier
Pages	209-241
Number of pages	33
ISBN (Electronic)	9780081019436
ISBN (Print)	9780081019429
DOIs	https://doi.org/10.1016/B978-0-08-101942-9.00006-X
State	Published - 1 Jan 2018

Keywords

Flip-chip LED (FCLED)
Gallium nitride (GaN)
Light-emitting diode (LED)
Photonic crystal (PC)
Thin-film LED (TFLED)

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10.1016/B978-0-08-101942-9.00006-X

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title = "Recent development of fabrication technologies of nitride LEDs for performance improvement",

abstract = "In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns, and polarization properties of GaN PC TFLEDs.",

keywords = "Flip-chip LED (FCLED), Gallium nitride (GaN), Light-emitting diode (LED), Photonic crystal (PC), Thin-film LED (TFLED)",

author = "Horng, {Ray Hua} and Wuu, {Dong Sing} and Lin, {Chia Feng} and Lai, {Chun Feng}",

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Recent development of fabrication technologies of nitride LEDs for performance improvement. / Horng, Ray Hua; Wuu, Dong Sing; Lin, Chia Feng et al.
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition. Elsevier, 2018. p. 209-241.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

TY - CHAP

T1 - Recent development of fabrication technologies of nitride LEDs for performance improvement

AU - Horng, Ray Hua

AU - Wuu, Dong Sing

AU - Lin, Chia Feng

AU - Lai, Chun Feng

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns, and polarization properties of GaN PC TFLEDs.

AB - In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns, and polarization properties of GaN PC TFLEDs.

KW - Flip-chip LED (FCLED)

KW - Gallium nitride (GaN)

KW - Light-emitting diode (LED)

KW - Photonic crystal (PC)

KW - Thin-film LED (TFLED)

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M3 - Chapter

AN - SCOPUS:85054379123

SN - 9780081019429

SP - 209

EP - 241

BT - Nitride Semiconductor Light-Emitting Diodes (LEDs)

PB - Elsevier

ER -

Recent development of fabrication technologies of nitride LEDs for performance improvement

Abstract

Keywords

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