Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

I. H. Chen; W. T. Lai; Pei-Wen Li

doi:10.1063/1.4884296

Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

I. H. Chen, W. T. Lai, Pei-Wen Li

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (G_D) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V_1/2, of G _D valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV_1/2≅ (1- 0.11n) × 5.15k_BT, providing the primary thermometric quantity. The depth of G_D valley is also proportional to charging energy (E _C) and 1/T via ΔG_D≅ E_C/9.18k _BT, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

Original language	English
Article number	243506
Journal	Applied Physics Letters
Volume	104
Issue number	24
DOIs	https://doi.org/10.1063/1.4884296
State	Published - 16 Jun 2014

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title = "Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime",

abstract = "Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (GD) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V1/2, of G D valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV1/2≅ (1- 0.11n) × 5.15kBT, providing the primary thermometric quantity. The depth of GD valley is also proportional to charging energy (E C) and 1/T via ΔGD≅ EC/9.18k BT, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.",

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AU - Chen, I. H.

AU - Lai, W. T.

AU - Li, Pei-Wen

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N2 - Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (GD) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V1/2, of G D valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV1/2≅ (1- 0.11n) × 5.15kBT, providing the primary thermometric quantity. The depth of GD valley is also proportional to charging energy (E C) and 1/T via ΔGD≅ EC/9.18k BT, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

AB - Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (GD) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V1/2, of G D valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV1/2≅ (1- 0.11n) × 5.15kBT, providing the primary thermometric quantity. The depth of GD valley is also proportional to charging energy (E C) and 1/T via ΔGD≅ EC/9.18k BT, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

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Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

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