Reactive ion etching of ZnO using a Cl₂/Ar mixture

Keyphrases

• Reactive Ion Etching 100%
• Ar Flow Rate 100%
• Radio Frequency Power 100%
• Working Pressure 100%
• Surface Topography 50%
• Atomic Force Microscopy 50%
• Nanorods 50%
• Light-emitting Diodes 50%
• Chamber Pressure 50%
• Etching Rate 50%
• Physical Properties 50%
• ZnO Film 50%
• Contact Layer 50%
• Total Surface Area 50%
• Root-mean-square Roughness 50%
• Ratio Analysis 50%
• Plasma Power 50%
• Gas Flow Ratio 50%
• Transparent Contacts 50%
• Radio Frequency Plasma 50%
• Maximum Height 50%
• Plasma Chamber 50%
• Bearing Ratio 50%

Material Science

• Reactive Ion Etching 100%
• ZnO 100%
• Film 50%
• Nanorod 50%
• Light-Emitting Diode 50%
• Physical Property 50%
• Gas Flow 50%
• Surface Topography 50%
• Atomic Force Microscopy 50%

Engineering

• Radio Frequency 100%
• Flow Rate 66%
• Flow Velocity 66%
• Torr 33%
• Surface Topography 33%
• Atomic Force Microscopy 33%
• Nanorod 33%
• Light-Emitting Diode 33%
• Chamber Pressure 33%
• Root Mean Square 33%
• Square Roughness 33%
• Gas Flow 33%