Reactive ion etching of ZnO using a Cl2/Ar mixture

K. P. Hsueh, R. J. Hou, Cheng-Huang Kuo, C. J. Tun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study investigates physical properties of ZnO films after reactive ions etching (RIE) using a Cl2Ar mixture by varying the gas flow ratio, radio-frequency (rf) plasma power and chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. The etching rate at a Cl2/Ar flow rate of 150/10 sccm, a work pressure of 60 m Torr and an rf power of 300 W is higher than under any other conditions. Additionally, the root-mean-square (rms) roughness of 24.20 nm is the highest at a Cl2/Ar flow rate of 150/10 sccm, a work pressure of 190 mTorr and an rf power of 300 W; it is suitable for roughened transparent contact layer (TCL) in light-emitting diodes (LED5). Bearing ratio analysis reveals that, under this condition, the nanorods covered 25.41 % of the total surface area and their maximum height was approximately 150.83 nm.

Original languageEnglish
Title of host publicationECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors
PublisherElectrochemical Society Inc.
Pages95-101
Number of pages7
Edition12
ISBN (Print)9781566776585
DOIs
StatePublished - 2009
EventZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number12
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

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