The changes in vacuum-evaporated films of Ti, V and Nb on Si and SiO//2 substrates after thermal anneals are investigated by backscattering and by x-ray spectrometry. Backscattering analysis provides the relative atomic composition as a function of depth with high sensitivity. Glancing angle x-ray spectrometry detects the chemical composition with high specificity. Combined, the two methods create a specific picture of the transformations induced in the films by the thermal treatment. Generally the reaction on a pure Si substrate produces a Si-rich silicide, and on a SiO//2 substrate a metal-rich silicide in the form of an intermediate layer largely free of oxygen. the oxygen originally bound to the Si in the SiO//2 is transferred to the remaining metal layer. Residual oxygen in the metal film and metal oxides on the metal film influence the silicide formation.
|Number of pages||15|
|State||Published - 1 Jan 1974|
|Event||Int Conf on Appl of Ion Beams to Met, Proc - Albuquerque, NM|
Duration: 2 Oct 1973 → 4 Oct 1973
|Conference||Int Conf on Appl of Ion Beams to Met, Proc|
|Period||2/10/73 → 4/10/73|