REACTIONS OF THIN METAL FILMS WITH Si OR SiO 2 SUBSTRATES.

H. Kraeutle*, W. K. Chu, M. A. Nicolet, J. W. Mayer, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

21 Scopus citations

Abstract

The changes in vacuum-evaporated films of Ti, V and Nb on Si and SiO//2 substrates after thermal anneals are investigated by backscattering and by x-ray spectrometry. Backscattering analysis provides the relative atomic composition as a function of depth with high sensitivity. Glancing angle x-ray spectrometry detects the chemical composition with high specificity. Combined, the two methods create a specific picture of the transformations induced in the films by the thermal treatment. Generally the reaction on a pure Si substrate produces a Si-rich silicide, and on a SiO//2 substrate a metal-rich silicide in the form of an intermediate layer largely free of oxygen. the oxygen originally bound to the Si in the SiO//2 is transferred to the remaining metal layer. Residual oxygen in the metal film and metal oxides on the metal film influence the silicide formation.

Original languageEnglish
Pages193-207
Number of pages15
DOIs
StatePublished - 1 Jan 1974
EventInt Conf on Appl of Ion Beams to Met, Proc - Albuquerque, NM
Duration: 2 Oct 19734 Oct 1973

Conference

ConferenceInt Conf on Appl of Ion Beams to Met, Proc
CityAlbuquerque, NM
Period2/10/734/10/73

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