@inproceedings{2b199f41d9884294a3ecbf0a8d80acd8,
title = "Reaction rate kinetics and film textures of palladium silicide formed on hydrogenated amorphous silicon",
abstract = " The reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18 at%) to form Pd 2 Si were studied in situ using x-ray diffraction and four-point probe resistivity measurements during isothermal annealing. These two techniques yielded activation energies and prefactors of E a = 1.36±0.11 eV with k 0 = 4.29 cm 2 /sec for the x-ray diffraction experiments; and E a = 0.97±0.22 eV with k 0 = 3.42×10 -4 cm 2 /sec for the resistivity measurements. The activation energy and prefactor obtained from the c-Si substrate of the resistivity measurements yielded E a = 1.41±0.31 eV and k 0 = 10.6 cm 2 /sec. Comparisons showed that the silicide formed from the a-Si:H reacted approximately 1.4 times faster than the silicide formed from the c-Si in the same sample, but three times faster than silicide formed on pure c-Si(111). The crystalline texture and grain size of the metal and silicide films were examined. ",
author = "Manning, {N. R.} and Chen, {H. D.} and Abelson, {J. R.} and Allen, {L. H.}",
year = "1993",
month = jan,
day = "1",
doi = "10.1557/PROC-311-311",
language = "English",
isbn = "1558992073",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "311--316",
booktitle = "Thermodynamics and Kinetics",
note = "Proceedings of the Symposium on Phase Transformations in Thin Films ; Conference date: 13-04-1993 Through 15-04-1993",
}