Re-examination the effects of selenium segregation on the Schottky barrier height reduction of the NiGe/Ge contact

Yi Ju Chen, Hung Ju Chou, Ching I. Li, Bing-Yue Tsui

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations

    Abstract

    Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.

    Original languageEnglish
    Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages108-109
    Number of pages2
    ISBN (Electronic)9781509007264
    DOIs
    StatePublished - 27 Sep 2016
    Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
    Duration: 12 Jun 201613 Jun 2016

    Publication series

    Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

    Conference

    Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
    Country/TerritoryUnited States
    CityHonolulu
    Period12/06/1613/06/16

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