Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide

J. Y.C. Sun*, R. Angelucci, C. Y. Wong, G. Scilla, E. Landi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work-function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals.

Original languageEnglish
Title of host publicationESSDERC 1988 - 18th European Solid State Device Research Conference
EditorsJ.-P. Nougier, D. Gasquet
PublisherIEEE Computer Society
PagesC4401-C4404
ISBN (Electronic)2868830994
ISBN (Print)9782868830999
StatePublished - 1988
Event18th European Solid State Device Research Conference, ESSDERC 1988 - Montpellier, France
Duration: 13 Sep 198816 Sep 1988

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference18th European Solid State Device Research Conference, ESSDERC 1988
Country/TerritoryFrance
CityMontpellier
Period13/09/8816/09/88

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