Rapid thermal annealing effects on blue luminescence of As-implanted GaN

H. Y. Huang; J. Q. Xiao; C. S. Ku; H. M. Chung; Wei-Kuo Chen; W. H. Chen; M. C. Lee; H. Y. Lee

doi:10.1063/1.1503160

Rapid thermal annealing effects on blue luminescence of As-implanted GaN

H. Y. Huang^*, J. Q. Xiao, C. S. Ku, H. M. Chung, Wei-Kuo Chen, W. H. Chen, M. C. Lee, H. Y. Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV.

Original language	English
Pages (from-to)	4129-4131
Number of pages	3
Journal	Journal of Applied Physics
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.1503160
State	Published - 1 Oct 2002

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@article{6091072d92884ae5bdff09d3ed6a1fc4,

title = "Rapid thermal annealing effects on blue luminescence of As-implanted GaN",

abstract = "Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV.",

author = "Huang, {H. Y.} and Xiao, {J. Q.} and Ku, {C. S.} and Chung, {H. M.} and Wei-Kuo Chen and Chen, {W. H.} and Lee, {M. C.} and Lee, {H. Y.}",

year = "2002",

month = oct,

day = "1",

doi = "10.1063/1.1503160",

language = "English",

volume = "92",

pages = "4129--4131",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Rapid thermal annealing effects on blue luminescence of As-implanted GaN

AU - Huang, H. Y.

AU - Xiao, J. Q.

AU - Ku, C. S.

AU - Chung, H. M.

AU - Chen, Wei-Kuo

AU - Chen, W. H.

AU - Lee, M. C.

AU - Lee, H. Y.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV.

AB - Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV.

UR - http://www.scopus.com/inward/record.url?scp=18644373157&partnerID=8YFLogxK

U2 - 10.1063/1.1503160

DO - 10.1063/1.1503160

M3 - Article

AN - SCOPUS:18644373157

SN - 0021-8979

VL - 92

SP - 4129

EP - 4131

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Rapid thermal annealing effects on blue luminescence of As-implanted GaN

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