Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-κ-metal-gate material

Hui Wen Cheng*, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Fingerprint

Dive into the research topics of 'Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-κ-metal-gate material'. Together they form a unique fingerprint.

Keyphrases

Engineering

Material Science