Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices

Thet Thet Khaing; Hui Wen Cheng; Kuo Fu Lee; Yiming Li

doi:10.1109/SMELEC.2010.5549571

Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices

Thet Thet Khaing, Hui Wen Cheng, Kuo Fu Lee, Yiming Li^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.

Original language	English
Title of host publication	ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
Pages	237-240
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2010.5549571
State	Published - 2010
Event	2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka, Malaysia Duration: 28 Jun 2010 → 30 Jun 2010

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference	2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
Country/Territory	Malaysia
City	Melaka
Period	28/06/10 → 30/06/10

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10.1109/SMELEC.2010.5549571

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Khaing, T. T., Cheng, H. W., Lee, K. F., & Li, Y. (2010). Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices. In ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics (pp. 237-240). Article 5549571 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2010.5549571

@inproceedings{bf735d139b7b4cf09c4fac4ca276427a,

title = "Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices",

abstract = "Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.",

author = "Khaing, {Thet Thet} and Cheng, {Hui Wen} and Lee, {Kuo Fu} and Yiming Li",

year = "2010",

doi = "10.1109/SMELEC.2010.5549571",

language = "English",

isbn = "9781424466092",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "237--240",

booktitle = "ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics",

note = "2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 ; Conference date: 28-06-2010 Through 30-06-2010",

}

Khaing, TT, Cheng, HW, Lee, KF & Li, Y 2010, Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices. in ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics., 5549571, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 237-240, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, Malaysia, 28/06/10. https://doi.org/10.1109/SMELEC.2010.5549571

Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices. / Khaing, Thet Thet; Cheng, Hui Wen; Lee, Kuo Fu et al.
ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics. 2010. p. 237-240 5549571 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices

AU - Khaing, Thet Thet

AU - Cheng, Hui Wen

AU - Lee, Kuo Fu

AU - Li, Yiming

PY - 2010

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N2 - Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.

AB - Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.

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SN - 9781424466092

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 237

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BT - ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics

T2 - 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010

Y2 - 28 June 2010 through 30 June 2010

ER -

Random-dopant-induced DC characteristic fluctuations in 16-nm-gate LAC and inLAC MOSFET devices

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