Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Y. C. Lin; C. H. Chiu; W. C. Fan; C. H. Chia; S. L. Yang; D. S. Chuu; M. C. Lee; Wei-Kuo Chen; Wen-Hao Chang; Wu-Ching Chou

doi:10.1063/1.2826936

Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Y. C. Lin, C. H. Chiu, W. C. Fan, C. H. Chia, S. L. Yang, D. S. Chuu, M. C. Lee, Wei-Kuo Chen, Wen-Hao Chang, Wu-Ching Chou^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The vibrational, electronic, and crystalline properties of n -type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2× 1015 to 1.8× 1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n -type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n -type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state.

Original language	English
Article number	123510
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of Applied Physics
Volume	102
Issue number	12
DOIs	https://doi.org/10.1063/1.2826936
State	Published - 15 Dec 2007

Access to Document

10.1063/1.2826936

Cite this

@article{2ecbb65f5a104be1bb932b6f9d6d49b7,

title = "Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure",

abstract = "The vibrational, electronic, and crystalline properties of n -type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2× 1015 to 1.8× 1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n -type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n -type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state.",

author = "Lin, {Y. C.} and Chiu, {C. H.} and Fan, {W. C.} and Chia, {C. H.} and Yang, {S. L.} and Chuu, {D. S.} and Lee, {M. C.} and Wei-Kuo Chen and Wen-Hao Chang and Wu-Ching Chou",

year = "2007",

month = dec,

day = "15",

doi = "10.1063/1.2826936",

language = "English",

volume = "102",

pages = "1--6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

AU - Lin, Y. C.

AU - Chiu, C. H.

AU - Fan, W. C.

AU - Chia, C. H.

AU - Yang, S. L.

AU - Chuu, D. S.

AU - Lee, M. C.

AU - Chen, Wei-Kuo

AU - Chang, Wen-Hao

AU - Chou, Wu-Ching

PY - 2007/12/15

Y1 - 2007/12/15

N2 - The vibrational, electronic, and crystalline properties of n -type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2× 1015 to 1.8× 1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n -type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n -type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state.

AB - The vibrational, electronic, and crystalline properties of n -type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2× 1015 to 1.8× 1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are analyzed using the Raman scattering efficiency and the dielectric function to obtain the electron densities and mobility. The splitting of the transverse-optical (TO) phonon and the redshift of the chlorine-related impurity vibration mode are clearly observed when pressure is applied. The semiconductor-to-metal phase transition pressure of ZnSe:Cl layers declines as the carrier concentration increases, indicating that n -type doping reduces crystal stability. Additionally, the pressure-induced weakening of the longitudinal-optical-phonon-plasmon coupling efficiency suggests that pressure tends to degrade the n -type characteristic of ZnSe:Cl because of the emergence of the new deep donorlike state.

UR - http://www.scopus.com/inward/record.url?scp=37549037441&partnerID=8YFLogxK

U2 - 10.1063/1.2826936

DO - 10.1063/1.2826936

M3 - Article

AN - SCOPUS:37549037441

SN - 0021-8979

VL - 102

SP - 1

EP - 6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123510

ER -

Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure

Abstract

Access to Document

Other files and links

Fingerprint

Cite this