Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/Alx Ga1-xas quantum wells

Kien-Wen Sun*, H. Y. Chang, C. M. Wang, T. S. Song, S. Y. Wang, C. P. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Using two optical techniques, we have studied the hot electron-optical phonon interactions in GaAs/AlxGa1-xAs multiple quantum wells. Raman scattering measurements at 15 K are presented for the Al composition of x = 0.3, 0.5, 0.7 and 1.0. The GaAs-like and AlAs-like phonon frequencies of the first-order modes are also measured as a function of Al compositions. The optical phonon energies emitted by the photoexcited electrons in quantum wells are determined by using hot electron-neutral acceptor luminescence techniques. It is shown that the relaxation of hot electrons in the quantum wells is dominated by the GaAs LO phonon emission for small x, but by AlAs-like LO phonons for larger Al composition.

Original languageEnglish
Title of host publicationProceedings of the 8th International Symposium Nanostructures
Subtitle of host publicationPhysics and Technology
EditorsZh. alferov, L. Esaki, ZH. Alferov, L. Esaki
Pages165-168
Number of pages4
StatePublished - Jun 2000
EventProceedings of the 8th International Symposium Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 19 Jun 200023 Jun 2000

Publication series

NameProceedings of the 8th International Symposium Nanostructures: Physics and Technology

Conference

ConferenceProceedings of the 8th International Symposium Nanostructures: Physics and Technology
Country/TerritoryRussian Federation
CitySt. Petersburg
Period19/06/0023/06/00

Fingerprint

Dive into the research topics of 'Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/Alx Ga1-xas quantum wells'. Together they form a unique fingerprint.

Cite this