Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications

Z. Y. Yang; Y. A. Huang; Horng-Chih Lin; Pei-Wen Li; K. M. Chen; G. W. Huang

doi:10.1109/EDTM.2018.8421455

Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications

Z. Y. Yang, Y. A. Huang, Horng-Chih Lin, Pei-Wen Li, K. M. Chen, G. W. Huang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We report the first of its kind, self-organized poly-Si TFT structure of T-shaped silicided gate, air-spacers, as well as silicided source/drain in a single etching process followed by Ni self-aligned silicidation (SALICIDE) process. Process-controlled tunability of the T-shaped gate length and sidewall air-spacers have been demonstrated, enabling a practically achievable core building block for high-performance radio-frequency (RF) poly-Si TFTs. Detailed structural and electrical properties of the T-gate poly-Si TFTs were assessed using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and gate resistance, sidewall capacitance, as well as dc and RF measurements. Notably, unity-gain frequency of 12.1 GHz is recorded for our T-gate poly-Si TFTs with channel length of 96 nm.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	178-180
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421455
State	Published - 26 Jul 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 13 Mar 2018 → 16 Mar 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	13/03/18 → 16/03/18

Keywords

T-shaped gate
internet of things
radio-frequency
selective etching
thin-film transistor

Access to Document

10.1109/EDTM.2018.8421455

Cite this

Yang, Z. Y., Huang, Y. A., Lin, H.-C., Li, P.-W., Chen, K. M., & Huang, G. W. (2018). Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 178-180). Article 8421455 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421455

Yang, Z. Y. ; Huang, Y. A. ; Lin, Horng-Chih et al. / Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 178-180 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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title = "Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications",

abstract = "We report the first of its kind, self-organized poly-Si TFT structure of T-shaped silicided gate, air-spacers, as well as silicided source/drain in a single etching process followed by Ni self-aligned silicidation (SALICIDE) process. Process-controlled tunability of the T-shaped gate length and sidewall air-spacers have been demonstrated, enabling a practically achievable core building block for high-performance radio-frequency (RF) poly-Si TFTs. Detailed structural and electrical properties of the T-gate poly-Si TFTs were assessed using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and gate resistance, sidewall capacitance, as well as dc and RF measurements. Notably, unity-gain frequency of 12.1 GHz is recorded for our T-gate poly-Si TFTs with channel length of 96 nm.",

keywords = "T-shaped gate, internet of things, radio-frequency, selective etching, thin-film transistor",

author = "Yang, {Z. Y.} and Huang, {Y. A.} and Horng-Chih Lin and Pei-Wen Li and Chen, {K. M.} and Huang, {G. W.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421455",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

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Yang, ZY, Huang, YA, Lin, H-C , Li, P-W, Chen, KM & Huang, GW 2018, Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421455, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 178-180, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421455

Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications. / Yang, Z. Y.; Huang, Y. A.; Lin, Horng-Chih et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 178-180 8421455 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications

AU - Yang, Z. Y.

AU - Huang, Y. A.

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

AU - Chen, K. M.

AU - Huang, G. W.

PY - 2018/7/26

Y1 - 2018/7/26

N2 - We report the first of its kind, self-organized poly-Si TFT structure of T-shaped silicided gate, air-spacers, as well as silicided source/drain in a single etching process followed by Ni self-aligned silicidation (SALICIDE) process. Process-controlled tunability of the T-shaped gate length and sidewall air-spacers have been demonstrated, enabling a practically achievable core building block for high-performance radio-frequency (RF) poly-Si TFTs. Detailed structural and electrical properties of the T-gate poly-Si TFTs were assessed using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and gate resistance, sidewall capacitance, as well as dc and RF measurements. Notably, unity-gain frequency of 12.1 GHz is recorded for our T-gate poly-Si TFTs with channel length of 96 nm.

AB - We report the first of its kind, self-organized poly-Si TFT structure of T-shaped silicided gate, air-spacers, as well as silicided source/drain in a single etching process followed by Ni self-aligned silicidation (SALICIDE) process. Process-controlled tunability of the T-shaped gate length and sidewall air-spacers have been demonstrated, enabling a practically achievable core building block for high-performance radio-frequency (RF) poly-Si TFTs. Detailed structural and electrical properties of the T-gate poly-Si TFTs were assessed using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and gate resistance, sidewall capacitance, as well as dc and RF measurements. Notably, unity-gain frequency of 12.1 GHz is recorded for our T-gate poly-Si TFTs with channel length of 96 nm.

KW - T-shaped gate

KW - internet of things

KW - radio-frequency

KW - selective etching

KW - thin-film transistor

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M3 - Conference contribution

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SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

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BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Yang ZY, Huang YA, Lin HC , Li PW, Chen KM, Huang GW. Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 178-180. 8421455. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421455

Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications

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Keywords

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