Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length

P. Huang; M. Y. Chen; Q. H. Luc; J. Y. Wu; N. A. Tran; E. Y. Chang

doi:10.1109/TED.2022.3228971

Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length

P. Huang, M. Y. Chen, Q. H. Luc, J. Y. Wu, N. A. Tran, E. Y. Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FEFETs) as a function of channel length (Lch) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long Lch. However, as Lch scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) is 15.4% (Lch = 75 nm) and 22.5% (Lch = 85 nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequencyproduct (TFP), respectively, at an optimizedLch of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity (Veff), better gate controllability, and reduced gate resistance (Rg).

Original language	English
Pages (from-to)	443-448
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	2
DOIs	https://doi.org/10.1109/TED.2022.3228971
State	Published - 1 Feb 2023

Keywords

Ferroelectric (FE)
InGaAs
MOSFETs
RF
technology computer-aided design (TCAD)

Access to Document

10.1109/TED.2022.3228971

Cite this

@article{2060a73341f44f48b2dfc3fa7c66624a,

title = "Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length",

abstract = "RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FEFETs) as a function of channel length (Lch) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long Lch. However, as Lch scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) is 15.4% (Lch = 75 nm) and 22.5% (Lch = 85 nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequencyproduct (TFP), respectively, at an optimizedLch of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity (Veff), better gate controllability, and reduced gate resistance (Rg).",

keywords = "Ferroelectric (FE), InGaAs, MOSFETs, RF, technology computer-aided design (TCAD)",

author = "P. Huang and Chen, {M. Y.} and Luc, {Q. H.} and Wu, {J. Y.} and Tran, {N. A.} and Chang, {E. Y.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = feb,

day = "1",

doi = "10.1109/TED.2022.3228971",

language = "English",

volume = "70",

pages = "443--448",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length

AU - Huang, P.

AU - Chen, M. Y.

AU - Luc, Q. H.

AU - Wu, J. Y.

AU - Tran, N. A.

AU - Chang, E. Y.

PY - 2023/2/1

Y1 - 2023/2/1

N2 - RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FEFETs) as a function of channel length (Lch) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long Lch. However, as Lch scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) is 15.4% (Lch = 75 nm) and 22.5% (Lch = 85 nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequencyproduct (TFP), respectively, at an optimizedLch of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity (Veff), better gate controllability, and reduced gate resistance (Rg).

AB - RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FEFETs) as a function of channel length (Lch) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long Lch. However, as Lch scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) is 15.4% (Lch = 75 nm) and 22.5% (Lch = 85 nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequencyproduct (TFP), respectively, at an optimizedLch of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity (Veff), better gate controllability, and reduced gate resistance (Rg).

KW - Ferroelectric (FE)

KW - InGaAs

KW - MOSFETs

KW - RF

KW - technology computer-aided design (TCAD)

UR - http://www.scopus.com/inward/record.url?scp=85146250791&partnerID=8YFLogxK

U2 - 10.1109/TED.2022.3228971

DO - 10.1109/TED.2022.3228971

M3 - Article

AN - SCOPUS:85146250791

SN - 0018-9383

VL - 70

SP - 443

EP - 448

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this