Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation

Ping Hsun Wu; Wan Hsuan Ku; Kun An Chiu; Li Chang

doi:10.1002/pssa.202100829

Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation

Ping Hsun Wu, Wan Hsuan Ku, Kun An Chiu, Li Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Microstructural evolution in ion-implanted and postannealed (001) diamond is investigated using transmission electron microscopy. For 150 keV ³¹P⁺ ion implantation into diamond with a fluence of 1 × 10¹⁵ cm⁻², an amorphous carbon interlayer about ≈80 nm thickness formed between damaged diamonds is observed. Postannealing at 1200 °C can recover some damaged diamond regions where the vacancy concentration is estimated below 3 × 10²² cm⁻³. However, graphitization from the amorphous carbon interlayer and the heavily damaged diamond regions with higher vacancy concentrations occurs to form an ≈85 nm-thick graphite layer after annealing.

Original language	English
Article number	2100829
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	219
Issue number	7
DOIs	https://doi.org/10.1002/pssa.202100829
State	Published - Apr 2022

Keywords

annealing
damage
diamond
ion implantation
transmission electron microscopy

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10.1002/pssa.202100829

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title = "Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation",

abstract = "Microstructural evolution in ion-implanted and postannealed (001) diamond is investigated using transmission electron microscopy. For 150 keV 31P+ ion implantation into diamond with a fluence of 1 × 1015 cm−2, an amorphous carbon interlayer about ≈80 nm thickness formed between damaged diamonds is observed. Postannealing at 1200 °C can recover some damaged diamond regions where the vacancy concentration is estimated below 3 × 1022 cm−3. However, graphitization from the amorphous carbon interlayer and the heavily damaged diamond regions with higher vacancy concentrations occurs to form an ≈85 nm-thick graphite layer after annealing.",

keywords = "annealing, damage, diamond, ion implantation, transmission electron microscopy",

author = "Wu, {Ping Hsun} and Ku, {Wan Hsuan} and Chiu, {Kun An} and Li Chang",

note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

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doi = "10.1002/pssa.202100829",

language = "English",

volume = "219",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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T1 - Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation

AU - Wu, Ping Hsun

AU - Ku, Wan Hsuan

AU - Chiu, Kun An

AU - Chang, Li

PY - 2022/4

Y1 - 2022/4

N2 - Microstructural evolution in ion-implanted and postannealed (001) diamond is investigated using transmission electron microscopy. For 150 keV 31P+ ion implantation into diamond with a fluence of 1 × 1015 cm−2, an amorphous carbon interlayer about ≈80 nm thickness formed between damaged diamonds is observed. Postannealing at 1200 °C can recover some damaged diamond regions where the vacancy concentration is estimated below 3 × 1022 cm−3. However, graphitization from the amorphous carbon interlayer and the heavily damaged diamond regions with higher vacancy concentrations occurs to form an ≈85 nm-thick graphite layer after annealing.

AB - Microstructural evolution in ion-implanted and postannealed (001) diamond is investigated using transmission electron microscopy. For 150 keV 31P+ ion implantation into diamond with a fluence of 1 × 1015 cm−2, an amorphous carbon interlayer about ≈80 nm thickness formed between damaged diamonds is observed. Postannealing at 1200 °C can recover some damaged diamond regions where the vacancy concentration is estimated below 3 × 1022 cm−3. However, graphitization from the amorphous carbon interlayer and the heavily damaged diamond regions with higher vacancy concentrations occurs to form an ≈85 nm-thick graphite layer after annealing.

KW - annealing

KW - damage

KW - diamond

KW - ion implantation

KW - transmission electron microscopy

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DO - 10.1002/pssa.202100829

M3 - Article

AN - SCOPUS:85124486520

SN - 1862-6300

VL - 219

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

M1 - 2100829

ER -

Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation

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