Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang; S. T. Yan; Po-Tsun Liu; C. W. Chen; H. H. Wu; S. M. Sze

doi:10.1063/1.1772873

Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang^*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

Original language	English
Pages (from-to)	248-250
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	2
DOIs	https://doi.org/10.1063/1.1772873
State	Published - 12 Jul 2004

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abstract = "The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.",

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T2 - A concept of multilevel charge storage

AU - Chang, T. C.

AU - Yan, S. T.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Wu, H. H.

AU - Sze, S. M.

PY - 2004/7/12

Y1 - 2004/7/12

N2 - The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

AB - The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

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SP - 248

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Quasisuperlattice storage: A concept of multilevel charge storage

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