The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.