Abstract
A modified quasi-static model is developed to optimize the power efficiency of double-drift X-Band Lo-Hi-Lo IMPATT diodes. It is assumed that the ionization rates and scattering-limited velocities for electrons and holes is not equal at an operation temperature of 150 degree C. It is concluded that the current tuning effect is the most important factor in designing the device structure. Large signal values of negative conductance, susceptance, r. f. power generation efficiency are calculated as a function of the oscillation voltage amplitude for a specified bias current density. All of this information provides a useful guide for both device and circuit designers.
| Original language | English |
|---|---|
| Pages (from-to) | 49-68 |
| Number of pages | 20 |
| Journal | J Natl Chiao Tung Univ |
| Volume | 2 |
| State | Published - 1 Jan 1976 |