Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations

Yu Sheng Wu; Pin Su

doi:10.1109/SOI.2009.5318772

Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations

Yu Sheng Wu^*, Pin Su

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (V_th) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the V_th variation.

Original language	English
Title of host publication	2009 IEEE International SOI Conference
DOIs	https://doi.org/10.1109/SOI.2009.5318772
State	Published - 28 Dec 2009
Event	2009 IEEE International SOI Conference - Foster City, CA, United States Duration: 5 Oct 2009 → 8 Oct 2009

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2009 IEEE International SOI Conference
Country/Territory	United States
City	Foster City, CA
Period	5/10/09 → 8/10/09

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10.1109/SOI.2009.5318772

Cite this

@inproceedings{c1e52b53ab5247ddb9888654f1558a03,

title = "Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations",

abstract = "We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (Vth) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the Vth variation.",

author = "Wu, {Yu Sheng} and Pin Su",

year = "2009",

month = dec,

day = "28",

doi = "10.1109/SOI.2009.5318772",

language = "English",

isbn = "9781424452323",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "2009 IEEE International SOI Conference",

note = "2009 IEEE International SOI Conference ; Conference date: 05-10-2009 Through 08-10-2009",

}

Wu, YS & Su, P 2009, Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations. in 2009 IEEE International SOI Conference., 5318772, Proceedings - IEEE International SOI Conference, 2009 IEEE International SOI Conference, Foster City, CA, United States, 5/10/09. https://doi.org/10.1109/SOI.2009.5318772

Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations. / Wu, Yu Sheng; Su, Pin.
2009 IEEE International SOI Conference. 2009. 5318772 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wu, Yu Sheng

AU - Su, Pin

PY - 2009/12/28

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N2 - We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (Vth) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the Vth variation.

AB - We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (Vth) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the Vth variation.

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DO - 10.1109/SOI.2009.5318772

M3 - Conference contribution

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SN - 9781424452323

T3 - Proceedings - IEEE International SOI Conference

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Y2 - 5 October 2009 through 8 October 2009

ER -

Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations

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