Quad-SCR Device for Cross-Domain ESD Protection

Federico A. Altolaguirre; Ming-Dou Ker

doi:10.1109/TED.2016.2579170

Quad-SCR Device for Cross-Domain ESD Protection

Federico A. Altolaguirre, Ming-Dou Ker^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25- μm CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 μm ×100μm.

Original language	English
Article number	7498685
Pages (from-to)	3177-3184
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	8
DOIs	https://doi.org/10.1109/TED.2016.2579170
State	Published - 1 Jan 2016

Keywords

Electrostatic discharge (ESD)
separated power domains
silicon controlled rectifier (SCR)

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10.1109/TED.2016.2579170

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abstract = "A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25- μm CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 μm ×100μm.",

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T1 - Quad-SCR Device for Cross-Domain ESD Protection

AU - Altolaguirre, Federico A.

AU - Ker, Ming-Dou

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N2 - A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25- μm CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 μm ×100μm.

AB - A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25- μm CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 μm ×100μm.

KW - Electrostatic discharge (ESD)

KW - separated power domains

KW - silicon controlled rectifier (SCR)

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Quad-SCR Device for Cross-Domain ESD Protection

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