Abstract
Mercury ion (Hg2+) sensor based on bottom gate top contact organic thin film transistor (OTFT) was fabricated. The OTFT channel area was functionalized with pyrene that contain thiol group, which has strong binding affinity toward Hg2+ ion. The OTFT sensor exhibited a charge mobility of 0.28 cm2 V−1 s−1, a threshold voltage of −22.3 V and on-to-off ratio 103. The sensor shows high selectivity to Hg2+ ion over other two valence metal ions. OTFT sensor exhibited high sensitivity to Hg2+ ion, indicated by increasing of drain current after exposed to different concentration of Hg2+ ion ranging from 1 mM to 0.01 μM. Moreover, the OTFT sensor capability for practical application was also demonstrated by sensing the present of 25 μM of Hg2+ ion in tap, drinking and seawater samples.
Original language | English |
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Pages (from-to) | 275-280 |
Number of pages | 6 |
Journal | Organic Electronics |
Volume | 69 |
DOIs | |
State | Published - Jun 2019 |
Keywords
- Mercury sensor
- Organic thin film transistor
- Pyrene derivative