Abstract
In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.
Original language | English |
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Article number | 6894153 |
Pages (from-to) | 854-859 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 50 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2014 |
Keywords
- AlN
- LED.
- Pulsed growth
- voids