Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO2AlN/sapphire template

Yu An Chen*, Cheng-Huang Kuo, Li Chuan Chang, Ji Pu Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.

Original languageEnglish
Article number6894153
Pages (from-to)854-859
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume50
Issue number10
DOIs
StatePublished - 1 Oct 2014

Keywords

  • AlN
  • LED.
  • Pulsed growth
  • voids

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