Properties of Pt/SrBi 2 Ta 2 O 9 /BL/Si MFIS structures containing HfO 2 , SiO 2 , and Si 3 N 4 buffer layers

Ching Chich Leu; Chia Feng Leu; Chao-Hsin Chien; Ming Jui Yang; Rui Hao Huang; Chen Han Lin; Fan Yi Hsu

doi:10.1149/1.2710176

Properties of Pt/SrBi ₂ Ta ₂ O ₉ /BL/Si MFIS structures containing HfO ₂ , SiO ₂ , and Si ₃ N ₄ buffer layers

Ching Chich Leu^*, Chia Feng Leu, Chao-Hsin Chien, Ming Jui Yang, Rui Hao Huang, Chen Han Lin, Fan Yi Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The physical and electrical properties of Pt SrBi2 Ta2 O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si ₃ N ₄ as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications.

Original language	English
Pages (from-to)	25-28
Number of pages	4
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	5
DOIs	https://doi.org/10.1149/1.2710176
State	Published - 23 Mar 2007

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title = "Properties of Pt/SrBi 2 Ta 2 O 9 /BL/Si MFIS structures containing HfO 2 , SiO 2 , and Si 3 N 4 buffer layers",

abstract = " The physical and electrical properties of Pt SrBi2 Ta2 O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si 3 N 4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications.",

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T1 - Properties of Pt/SrBi 2 Ta 2 O 9 /BL/Si MFIS structures containing HfO 2 , SiO 2 , and Si 3 N 4 buffer layers

AU - Leu, Ching Chich

AU - Leu, Chia Feng

AU - Chien, Chao-Hsin

AU - Yang, Ming Jui

AU - Huang, Rui Hao

AU - Lin, Chen Han

AU - Hsu, Fan Yi

PY - 2007/3/23

Y1 - 2007/3/23

N2 - The physical and electrical properties of Pt SrBi2 Ta2 O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si 3 N 4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications.

AB - The physical and electrical properties of Pt SrBi2 Ta2 O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si 3 N 4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications.

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VL - 10

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JO - Electrochemical and Solid-State Letters

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IS - 5

ER -

Properties of Pt/SrBi ₂ Ta ₂ O ₉ /BL/Si MFIS structures containing HfO ₂ , SiO ₂ , and Si ₃ N ₄ buffer layers

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