Properties of metalorganic chemical vapor deposited tantalum nitride thin films

S. C. Sun; M. H. Tsai; C. E. Tsai; Hsin-Tien Chiu

doi:10.1109/ICSICT.1995.503346

Properties of metalorganic chemical vapor deposited tantalum nitride thin films

S. C. Sun^*, M. H. Tsai, C. E. Tsai, Hsin-Tien Chiu

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and x-ray diffraction (XRD) analysis indicated that 600°C as-deposited films exhibit the polycrystalline structure with 〈200〉 preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.

Original language	English
Pages	547-549
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.1995.503346
State	Published - 1995
Event	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 24 Oct 1995 → 28 Oct 1995

Conference

Conference	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	24/10/95 → 28/10/95

Access to Document

10.1109/ICSICT.1995.503346

Cite this

@conference{5b90179fee55470c8436ebf851243dd8,

title = "Properties of metalorganic chemical vapor deposited tantalum nitride thin films",

abstract = "Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and x-ray diffraction (XRD) analysis indicated that 600°C as-deposited films exhibit the polycrystalline structure with 〈200〉 preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.",

author = "Sun, {S. C.} and Tsai, {M. H.} and Tsai, {C. E.} and Hsin-Tien Chiu",

year = "1995",

doi = "10.1109/ICSICT.1995.503346",

language = "English",

pages = "547--549",

note = "Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 24-10-1995 Through 28-10-1995",

}

TY - CONF

T1 - Properties of metalorganic chemical vapor deposited tantalum nitride thin films

AU - Sun, S. C.

AU - Tsai, M. H.

AU - Tsai, C. E.

AU - Chiu, Hsin-Tien

PY - 1995

Y1 - 1995

N2 - Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and x-ray diffraction (XRD) analysis indicated that 600°C as-deposited films exhibit the polycrystalline structure with 〈200〉 preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.

AB - Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and x-ray diffraction (XRD) analysis indicated that 600°C as-deposited films exhibit the polycrystalline structure with 〈200〉 preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.

UR - http://www.scopus.com/inward/record.url?scp=0029453168&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.1995.503346

DO - 10.1109/ICSICT.1995.503346

M3 - Paper

AN - SCOPUS:0029453168

SP - 547

EP - 549

T2 - Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 24 October 1995 through 28 October 1995

ER -

Properties of metalorganic chemical vapor deposited tantalum nitride thin films

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this