Processing and applications of lanthanum-doped Ba0·8Sr0·2TiO3PTCR ceramics

Tseung-Yuen Tseng; Y. Y. Lu

doi:10.1016/0272-8842(88)90009-0

Processing and applications of lanthanum-doped Ba_0·8Sr_0·2TiO₃PTCR ceramics

Tseung-Yuen Tseng^*, Y. Y. Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Semiconducting lanthanum-doped Ba_0·8Sr_0·2TiO₃ positive temperature coefficient of resistivity (PTCR) ceramics were prepared. The variation of grain boundary resistance with temperature has been studied by complex-plane impedance analysis. The potential applications of the PTCR ceramics produced, as a current limiter and a current stabilizer, are reported.

Original language	English
Pages (from-to)	195-198
Number of pages	4
Journal	Ceramics International
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/0272-8842(88)90009-0
State	Published - Jan 1988

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title = "Processing and applications of lanthanum-doped Ba0·8Sr0·2TiO3PTCR ceramics",

abstract = "Semiconducting lanthanum-doped Ba0·8Sr0·2TiO3 positive temperature coefficient of resistivity (PTCR) ceramics were prepared. The variation of grain boundary resistance with temperature has been studied by complex-plane impedance analysis. The potential applications of the PTCR ceramics produced, as a current limiter and a current stabilizer, are reported.",

author = "Tseung-Yuen Tseng and Lu, {Y. Y.}",

year = "1988",

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AU - Tseng, Tseung-Yuen

AU - Lu, Y. Y.

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Y1 - 1988/1

N2 - Semiconducting lanthanum-doped Ba0·8Sr0·2TiO3 positive temperature coefficient of resistivity (PTCR) ceramics were prepared. The variation of grain boundary resistance with temperature has been studied by complex-plane impedance analysis. The potential applications of the PTCR ceramics produced, as a current limiter and a current stabilizer, are reported.

AB - Semiconducting lanthanum-doped Ba0·8Sr0·2TiO3 positive temperature coefficient of resistivity (PTCR) ceramics were prepared. The variation of grain boundary resistance with temperature has been studied by complex-plane impedance analysis. The potential applications of the PTCR ceramics produced, as a current limiter and a current stabilizer, are reported.

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U2 - 10.1016/0272-8842(88)90009-0

DO - 10.1016/0272-8842(88)90009-0

M3 - Article

AN - SCOPUS:9644277920

SN - 0272-8842

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EP - 198

JO - Ceramics International

JF - Ceramics International

IS - 3

ER -

Processing and applications of lanthanum-doped Ba_0·8Sr_0·2TiO₃PTCR ceramics

Abstract

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