Process-related reliability issues toward sub-100 nm device regime

C. Y. Chang; Tien-Sheng Chao; Horng-Chih Lin; Chao-Hsin Chien

doi:10.1109/MIEL.2002.1003159

Process-related reliability issues toward sub-100 nm device regime

C. Y. Chang, Tien-Sheng Chao, Horng-Chih Lin, Chao-Hsin Chien

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.

Original language	American English
Title of host publication	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Publisher	IEEE Computer Society
Pages	133-140
Number of pages	8
ISBN (Print)	0780372352, 9780780372351
DOIs	https://doi.org/10.1109/MIEL.2002.1003159
State	Published - 2002
Event	2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia Duration: 12 May 2002 → 15 May 2002

Publication series

Name	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Volume	1

Conference

Conference	2002 23rd International Conference on Microelectronics, MIEL 2002
Country/Territory	Serbia
City	Nis
Period	12/05/02 → 15/05/02

Access to Document

10.1109/MIEL.2002.1003159

Cite this

Chang, C. Y., Chao, T.-S., Lin, H.-C., & Chien, C.-H. (2002). Process-related reliability issues toward sub-100 nm device regime. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings (pp. 133-140). Article 1003159 (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/MIEL.2002.1003159

@inproceedings{f057423b4af245f8ae7a135efecfa60f,

title = "Process-related reliability issues toward sub-100 nm device regime",

abstract = "Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.",

author = "Chang, {C. Y.} and Tien-Sheng Chao and Horng-Chih Lin and Chao-Hsin Chien",

year = "2002",

doi = "10.1109/MIEL.2002.1003159",

language = "American English",

isbn = "0780372352",

series = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

publisher = "IEEE Computer Society",

pages = "133--140",

booktitle = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

address = "United States",

note = "2002 23rd International Conference on Microelectronics, MIEL 2002 ; Conference date: 12-05-2002 Through 15-05-2002",

}

Chang, CY, Chao, T-S , Lin, H-C & Chien, C-H 2002, Process-related reliability issues toward sub-100 nm device regime. in 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings., 1003159, 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, vol. 1, IEEE Computer Society, pp. 133-140, 2002 23rd International Conference on Microelectronics, MIEL 2002, Nis, Serbia, 12/05/02. https://doi.org/10.1109/MIEL.2002.1003159

Process-related reliability issues toward sub-100 nm device regime. / Chang, C. Y.; Chao, Tien-Sheng ; Lin, Horng-Chih et al.
2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. IEEE Computer Society, 2002. p. 133-140 1003159 (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chao, Tien-Sheng

AU - Lin, Horng-Chih

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PY - 2002

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N2 - Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.

AB - Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.

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DO - 10.1109/MIEL.2002.1003159

M3 - Conference contribution

AN - SCOPUS:84906667180

SN - 0780372352

SN - 9780780372351

T3 - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

SP - 133

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BT - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

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T2 - 2002 23rd International Conference on Microelectronics, MIEL 2002

Y2 - 12 May 2002 through 15 May 2002

ER -

Process-related reliability issues toward sub-100 nm device regime

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