Process optimization for preventing boron-penetration using P or as co-implant in p-poly gate of P-MOSFETs

W. T. Sun*, S. H. Chen, C. J. Lin, Tien-Sheng Chao, C. C.H. Hsu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

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Physics & Astronomy

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Chemical Compounds