Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices

Ping Hsun Su, Yiming Li

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this paper, we explore the electrical characteristics of ring oscillator (RO) by optimizing fabrication inline windows of 16-nm high- κ /metal-gate bulk FinFET devices. Key process parameters are ranked according to ROs' performance, including effective capacitance (Ceff), effective resistance (Reff), and integrated circuit quiescent current (IDDQ). Process-dependence factors are then extracted and classified to reveal the actual root cause of each cluster. The findings of this paper indicate the dual gate spacer, the source/drain (S/D) proximity, the S/D depth, and the S/D implant affect Ceff, Reff, and IDDQ significantly, but the variation source of these parameters is the thickness of the dual gate spacer. Furthermore, impacts of the ON-state current ratio of N/P devices on delay and IDDQ of RO are examined by replacing dual spacers with single ones, the uniformity of implantation can be enhanced. Thus, the fluctuation of IDDQ is seven times reduced (from 252 to 37 nA) and RO characteristic can fit to designing target.

Original languageEnglish
Article number7505920
Pages (from-to)3058-3063
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 7 Jul 2016


  • Bulk Fin-typed FETs (FinFETs)
  • characteristic fluctuation
  • effective capacitance
  • effective resistance
  • frequency
  • inkline process parameters
  • integrated circuit quiescent current (IDDQ)
  • ring oscillators (ROs)


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