@inproceedings{76505fe1a76a4765acdf2f511834ba10,
title = "Process- and random-dopant-induced characteristic variability of SRAM with nano-CMOS and bulk FinFET devices",
abstract = "In this study, a three-dimensional {"}atomistic{"} circuit-device coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, the SNM fluctuation increases from 4% to 27%. To reduce the device variability induced fluctuation in circuit, a 16-nm-gate silicon-on-insulator fin-type field-effect-transistor (FinFET) with aspect ratio (fin height fin width) equal to two is investigated. Due to its superior electrostatic integrity and larger effective device width, the fluctuation of SNM of 16-nm-gate FinFET SRAM could be suppressed by five times. Comparing with the 65 nm planar MOSFET SRAM, FinFETs SRAM is promising in aggressively scaled silicon technology.",
keywords = "Fin-type field-effect-transistor, Metal-oxide-semiconductor field-effect-transistor, Process variation effect, Random dopant fluctuation, Static noise margin, Static random access memory, nanoscale device, process variation, random dopant fluctuation, SRAM",
author = "Li, {Tien Yeh} and Hwang, {Chih Hong} and Yi-Ming Li",
year = "2009",
month = may,
day = "3",
language = "American English",
isbn = "9781439817827",
volume = "1",
series = "Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009",
pages = "586--589",
booktitle = "Nanotechnology 2009",
note = "Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 ; Conference date: 03-05-2009 Through 07-05-2009",
}