Probabilistic-Bits Based on Ferroelectric Field-Effect Transistors for Probabilistic Computing

Sheng Luo*, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A probabilistic bit (p-bit) is the fundamental building block in the circuit of probabilistic computing (PC), and it produces a random binary bitstream with tunable probability. Utilizing the randomness induced by thermal noise-induced lattice vibration in the ferroelectric (FE) material, we propose the p-bits based on stochastic ferroelectric FET (FeFET). The domain dynamic is revealed to play crucial roles in FE p-bits' stochasticity, as the domain coupling suppresses the dipole fluctuation. The proposed FE p-bits possess the advantages of both extremely low hardware cost and scalability for p-bit circuitry, rendering it a promising candidate for PC.

Original languageEnglish
Pages (from-to)1356-1359
Number of pages4
JournalIeee Electron Device Letters
Volume44
Issue number8
DOIs
StatePublished - 1 Aug 2023

Keywords

  • dynamic model
  • FeFET
  • multi-domain system
  • probabilistic computing
  • probabilistic-bit

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