Pressure-induced metallization and resonant Raman scattering in Zn1-x MnxTe

Y. C. Lin; W. C. Fan; C. H. Chiu; F. K. Ke; S. L. Yang; D. S. Chuu; M. C. Lee; Wei-Kuo Chen; Wen-Hao Chang; Wu-Ching Chou; J. S. Hsu; J. L. Shen

doi:10.1063/1.2949707

Pressure-induced metallization and resonant Raman scattering in Zn_1-x Mn_xTe

Y. C. Lin, W. C. Fan, C. H. Chiu, F. K. Ke, S. L. Yang, D. S. Chuu, M. C. Lee, Wei-Kuo Chen, Wen-Hao Chang, Wu-Ching Chou, J. S. Hsu, J. L. Shen

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

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Abstract

Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn_1-x Mn_x Te (0 ≦x≦0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt (x) =15.7-25.4x+19.0 x² (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Grüneisen parameters were adopted to investigate the influence of Mn2+ ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn_1-x Mn_x Te.

Original language	English
Article number	013503
Pages (from-to)	1-5
Number of pages	5
Journal	Journal of Applied Physics
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.2949707
State	Published - 1 Jul 2008

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@article{62a53a9e28604fc59460a640bab50f1e,

title = "Pressure-induced metallization and resonant Raman scattering in Zn1-x MnxTe",

abstract = "Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn1-x Mnx Te (0 ≦x≦0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt (x) =15.7-25.4x+19.0 x2 (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Gr{\"u}neisen parameters were adopted to investigate the influence of Mn2+ ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn1-x Mnx Te.",

author = "Lin, {Y. C.} and Fan, {W. C.} and Chiu, {C. H.} and Ke, {F. K.} and Yang, {S. L.} and Chuu, {D. S.} and Lee, {M. C.} and Wei-Kuo Chen and Wen-Hao Chang and Wu-Ching Chou and Hsu, {J. S.} and Shen, {J. L.}",

year = "2008",

month = jul,

day = "1",

doi = "10.1063/1.2949707",

language = "English",

volume = "104",

pages = "1--5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Pressure-induced metallization and resonant Raman scattering in Zn1-x MnxTe

AU - Lin, Y. C.

AU - Fan, W. C.

AU - Chiu, C. H.

AU - Ke, F. K.

AU - Yang, S. L.

AU - Chuu, D. S.

AU - Lee, M. C.

AU - Chen, Wei-Kuo

AU - Chang, Wen-Hao

AU - Chou, Wu-Ching

AU - Hsu, J. S.

AU - Shen, J. L.

PY - 2008/7/1

Y1 - 2008/7/1

N2 - Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn1-x Mnx Te (0 ≦x≦0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt (x) =15.7-25.4x+19.0 x2 (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Grüneisen parameters were adopted to investigate the influence of Mn2+ ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn1-x Mnx Te.

AB - Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn1-x Mnx Te (0 ≦x≦0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt (x) =15.7-25.4x+19.0 x2 (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Grüneisen parameters were adopted to investigate the influence of Mn2+ ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn1-x Mnx Te.

UR - http://www.scopus.com/inward/record.url?scp=47749127324&partnerID=8YFLogxK

U2 - 10.1063/1.2949707

DO - 10.1063/1.2949707

M3 - Article

AN - SCOPUS:47749127324

SN - 0021-8979

VL - 104

SP - 1

EP - 5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013503

ER -

Pressure-induced metallization and resonant Raman scattering in Zn_1-x Mn_xTe

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