Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

Samuel K.H. Fung; Pin Su; Chen-Ming Hu

Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

Samuel K.H. Fung^*, Pin Su, Chen-Ming Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

Original language	English
Title of host publication	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
Editors	M. Laudon, B. Romanowicz
Pages	690-693
Number of pages	4
State	Published - 2002
Event	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico Duration: 21 Apr 2002 → 25 Apr 2002

Publication series

Name	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
Country/Territory	Puerto Rico
City	San Juan
Period	21/04/02 → 25/04/02

Keywords

Compact model
Fully depleted
History effect
Partially depleted
SOI

Cite this

Fung, Samuel K.H. ; Su, Pin ; Hu, Chen-Ming. / Present status and future direction of BSIM SOI model for high-performance/low-power/RF application. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. editor / M. Laudon ; B. Romanowicz. 2002. pp. 690-693 (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).

@inproceedings{51aaa468953746f5b63be4f367cd787b,

title = "Present status and future direction of BSIM SOI model for high-performance/low-power/RF application",

abstract = "The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.",

keywords = "Compact model, Fully depleted, History effect, Partially depleted, SOI",

author = "Fung, {Samuel K.H.} and Pin Su and Chen-Ming Hu",

year = "2002",

language = "English",

isbn = "0970827571",

series = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",

pages = "690--693",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",

note = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 ; Conference date: 21-04-2002 Through 25-04-2002",

}

Fung, SKH, Su, P & Hu, C-M 2002, Present status and future direction of BSIM SOI model for high-performance/low-power/RF application. in M Laudon & B Romanowicz (eds), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002, pp. 690-693, 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002, San Juan, Puerto Rico, 21/04/02.

Present status and future direction of BSIM SOI model for high-performance/low-power/RF application. / Fung, Samuel K.H.; Su, Pin ; Hu, Chen-Ming.
2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 690-693 (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

AU - Fung, Samuel K.H.

AU - Su, Pin

AU - Hu, Chen-Ming

PY - 2002

Y1 - 2002

N2 - The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

AB - The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

KW - Compact model

KW - Fully depleted

KW - History effect

KW - Partially depleted

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=6344243663&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344243663

SN - 0970827571

SN - 9780970827579

T3 - 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

SP - 690

EP - 693

BT - 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Y2 - 21 April 2002 through 25 April 2002

ER -

Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

Abstract

Publication series

Conference

Keywords

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