Preparation of manganese thin film in toom-temperature butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide ionic liquid and its application for supercapacitors

Jeng-Kuei Chang; Wen Ta Tsai; Po Yu Chen; Chiung Hui Huang; Fu Hwa Yeh; I. Wen Sun

doi:10.1149/1.2388243

Preparation of manganese thin film in toom-temperature butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide ionic liquid and its application for supercapacitors

Jeng-Kuei Chang^*, Wen Ta Tsai, Po Yu Chen, Chiung Hui Huang, Fu Hwa Yeh, I. Wen Sun

^*Corresponding author for this work

Department of Materials Science and Engineering

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21 Scopus citations

Abstract

The butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide (BMP- NTf2) ionic liquid was found to have a very wide potential window of 4.5 V, making it capable of being a medium for electrodepositing metallic Mn thin film. By using an electrochemical process, block manganese counter electrode was dissolved in the ionic liquid to generate divalent Mn, which was subsequently cathodically deposited on the nickel substrate. The current efficiency of this process was confirmed to be extremely high (close to 100%). The Mn thin film can be oxidized to manganese oxide by cyclic voltammetry in Na2 S O4 electrolyte. The obtained manganese oxide exhibited an excellent pseudo-capacitive performance and possessed a satisfactory specific capacitance of 265 Fg at a moderate cyclic voltammetric sweep rate of 25 mVs.

Original language	English
Article number	033701ESL
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1149/1.2388243
State	Published - 1 Jan 2007

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title = "Preparation of manganese thin film in toom-temperature butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide ionic liquid and its application for supercapacitors",

abstract = "The butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide (BMP- NTf2) ionic liquid was found to have a very wide potential window of 4.5 V, making it capable of being a medium for electrodepositing metallic Mn thin film. By using an electrochemical process, block manganese counter electrode was dissolved in the ionic liquid to generate divalent Mn, which was subsequently cathodically deposited on the nickel substrate. The current efficiency of this process was confirmed to be extremely high (close to 100%). The Mn thin film can be oxidized to manganese oxide by cyclic voltammetry in Na2 S O4 electrolyte. The obtained manganese oxide exhibited an excellent pseudo-capacitive performance and possessed a satisfactory specific capacitance of 265 Fg at a moderate cyclic voltammetric sweep rate of 25 mVs.",

author = "Jeng-Kuei Chang and Tsai, {Wen Ta} and Chen, {Po Yu} and Huang, {Chiung Hui} and Yeh, {Fu Hwa} and Sun, {I. Wen}",

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doi = "10.1149/1.2388243",

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volume = "10",

journal = "Electrochemical and Solid-State Letters",

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Preparation of manganese thin film in toom-temperature butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide ionic liquid and its application for supercapacitors. / Chang, Jeng-Kuei; Tsai, Wen Ta; Chen, Po Yu et al.
In: Electrochemical and Solid-State Letters, Vol. 10, No. 1, 033701ESL, 01.01.2007.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Preparation of manganese thin film in toom-temperature butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide ionic liquid and its application for supercapacitors

AU - Chang, Jeng-Kuei

AU - Tsai, Wen Ta

AU - Chen, Po Yu

AU - Huang, Chiung Hui

AU - Yeh, Fu Hwa

AU - Sun, I. Wen

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide (BMP- NTf2) ionic liquid was found to have a very wide potential window of 4.5 V, making it capable of being a medium for electrodepositing metallic Mn thin film. By using an electrochemical process, block manganese counter electrode was dissolved in the ionic liquid to generate divalent Mn, which was subsequently cathodically deposited on the nickel substrate. The current efficiency of this process was confirmed to be extremely high (close to 100%). The Mn thin film can be oxidized to manganese oxide by cyclic voltammetry in Na2 S O4 electrolyte. The obtained manganese oxide exhibited an excellent pseudo-capacitive performance and possessed a satisfactory specific capacitance of 265 Fg at a moderate cyclic voltammetric sweep rate of 25 mVs.

AB - The butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide (BMP- NTf2) ionic liquid was found to have a very wide potential window of 4.5 V, making it capable of being a medium for electrodepositing metallic Mn thin film. By using an electrochemical process, block manganese counter electrode was dissolved in the ionic liquid to generate divalent Mn, which was subsequently cathodically deposited on the nickel substrate. The current efficiency of this process was confirmed to be extremely high (close to 100%). The Mn thin film can be oxidized to manganese oxide by cyclic voltammetry in Na2 S O4 electrolyte. The obtained manganese oxide exhibited an excellent pseudo-capacitive performance and possessed a satisfactory specific capacitance of 265 Fg at a moderate cyclic voltammetric sweep rate of 25 mVs.

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DO - 10.1149/1.2388243

M3 - Article

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SN - 1099-0062

VL - 10

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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Preparation of manganese thin film in toom-temperature butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide ionic liquid and its application for supercapacitors

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