Power-Up sequence control for MTCMOS designs

Shi Hao Chen*, Youn Long Lin, Chia-Tso Chao

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    11 Scopus citations

    Abstract

    Power gating is effective for reducing standby leakage power as multi-threshold CMOS (MTCMOS) designs have become popular in the industry. However, a large inrush current and dynamic IR drop may occur when a circuit domain is powered up with MTCMOS switches. This could in turn lead to improper circuit operation. We propose a novel framework for generating a proper power-up sequence of the switches to control the inrush current of a power-gated domain while minimizing the power-up time and reducing the dynamic IR drop of the active domains. We also propose a configurable domino-delay circuit for implementing the sequence. Experimental results based on state-of-the-art industrial designs demonstrate the effectiveness of the proposed framework in limiting the inrush current, minimizing the power-up time, and reducing the dynamic IR drop. Results further confirm the efficiency of the framework in handling large-scale designs with more than 80 K power switches and 100 M transistors.

    Original languageEnglish
    Article number6170911
    Pages (from-to)413-423
    Number of pages11
    JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
    Volume21
    Issue number3
    DOIs
    StatePublished - 2013

    Keywords

    • Dynamic IR
    • inrush current
    • low power design
    • multi-threshold CMOS (MTCMOS)
    • power gating
    • power-up sequence
    • ramp-up time

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