Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

Min Yu Tsai; Horng-Chih Lin; Da Yuan Lee; Tiao Yuan Huang

doi:10.1109/55.930687

Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

Min Yu Tsai, Horng-Chih Lin^*, Da Yuan Lee, Tiao Yuan Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of BD at the drain. Nevertheless, significant increase in gate current is observed in the off-state when the gate voltage is more negative than -1 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after SBD occurrence at the channel.

Original language	English
Pages (from-to)	348-350
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	7
DOIs	https://doi.org/10.1109/55.930687
State	Published - 1 Jul 2001

Keywords

Gate induced drain leakage
Gate leakage
Parasitic bipolar transistor
Soft-breakdown

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10.1109/55.930687

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title = "Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide",

abstract = "The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of BD at the drain. Nevertheless, significant increase in gate current is observed in the off-state when the gate voltage is more negative than -1 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after SBD occurrence at the channel.",

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AU - Tsai, Min Yu

AU - Lin, Horng-Chih

AU - Lee, Da Yuan

AU - Huang, Tiao Yuan

PY - 2001/7/1

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N2 - The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of BD at the drain. Nevertheless, significant increase in gate current is observed in the off-state when the gate voltage is more negative than -1 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after SBD occurrence at the channel.

AB - The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of BD at the drain. Nevertheless, significant increase in gate current is observed in the off-state when the gate voltage is more negative than -1 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after SBD occurrence at the channel.

KW - Gate induced drain leakage

KW - Gate leakage

KW - Parasitic bipolar transistor

KW - Soft-breakdown

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JO - IEEE Electron Device Letters

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ER -

Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

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Keywords

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