Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ming Wen Ma, Wen Cheng Lo

*Corresponding author for this work

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