Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

Woei Cherng Wu; Tien-Sheng Chao; Te Hsin Chiu; Jer Chyi Wang; Chao Sung Lai; Ming Wen Ma; Wen Cheng Lo

doi:10.1109/LED.2008.2005519

Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO₂ nMOSFET

Woei Cherng Wu^*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ming Wen Ma, Wen Cheng Lo

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO₂ nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO₂ dielectric are investigated for PBTI characteristics. A roughly 50% reduction of V_TH shift can be achieved for the 300-nm CESL HfO₂ nMOSFET after 1000-s PBTI stressing without obvious HfO₂/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO₂ film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO₂ film can be eliminated for CESL devices.

Original language	English
Pages (from-to)	1340-1343
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LED.2008.2005519
State	Published - 8 Dec 2008

Keywords

Contact etch stop layer (CESL)
HfO
Positive bias temperature instability (PBTI)

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@article{e7cf6af0dd0a49548a971f377b5c0890,

title = "Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET",

abstract = "The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics. A roughly 50% reduction of VTH shift can be achieved for the 300-nm CESL HfO2 nMOSFET after 1000-s PBTI stressing without obvious HfO2/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO2 film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO2 film can be eliminated for CESL devices.",

keywords = "Contact etch stop layer (CESL), HfO, Positive bias temperature instability (PBTI)",

author = "Wu, {Woei Cherng} and Tien-Sheng Chao and Chiu, {Te Hsin} and Wang, {Jer Chyi} and Lai, {Chao Sung} and Ma, {Ming Wen} and Lo, {Wen Cheng}",

year = "2008",

month = dec,

day = "8",

doi = "10.1109/LED.2008.2005519",

language = "English",

volume = "29",

pages = "1340--1343",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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T1 - Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

AU - Wu, Woei Cherng

AU - Chao, Tien-Sheng

AU - Chiu, Te Hsin

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Ma, Ming Wen

AU - Lo, Wen Cheng

PY - 2008/12/8

Y1 - 2008/12/8

N2 - The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics. A roughly 50% reduction of VTH shift can be achieved for the 300-nm CESL HfO2 nMOSFET after 1000-s PBTI stressing without obvious HfO2/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO2 film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO2 film can be eliminated for CESL devices.

AB - The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics. A roughly 50% reduction of VTH shift can be achieved for the 300-nm CESL HfO2 nMOSFET after 1000-s PBTI stressing without obvious HfO2/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO2 film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO2 film can be eliminated for CESL devices.

KW - Contact etch stop layer (CESL)

KW - HfO

KW - Positive bias temperature instability (PBTI)

UR - http://www.scopus.com/inward/record.url?scp=57049084515&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2005519

DO - 10.1109/LED.2008.2005519

M3 - Article

AN - SCOPUS:57049084515

SN - 0741-3106

VL - 29

SP - 1340

EP - 1343

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO₂ nMOSFET

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Keywords

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