Porous materials with ultra-low dielectric constant as antireflective coating layers for F 2 and ArF lithography

H. L. Chen; C. W. Tu; T. J. Wang; Po-Tsun Liu; Fu-Hsiang Ko; T. C. Chung

doi:10.1109/IMNC.2003.1268606

Porous materials with ultra-low dielectric constant as antireflective coating layers for F ² and ArF lithography

H. L. Chen, C. W. Tu, T. J. Wang, Po-Tsun Liu, Fu-Hsiang Ko, T. C. Chung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, optical characteristics of porous MSQ were measured for BARC applications. Optical constants of porous MSQ are (1.432, 0.004) and (1.245, 0.454) at 193 and 157 nm, respectively. For 157 nm, the porous MSQ film has suitable optical characteristics as a BARC layer.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	122-123
Number of pages	2
ISBN (Electronic)	4891140402, 9784891140403
DOIs	https://doi.org/10.1109/IMNC.2003.1268606
State	Published - 1 Jan 2003
Event	International Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan Duration: 29 Oct 2003 → 31 Oct 2003

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2003
Country/Territory	Japan
City	Tokyo
Period	29/10/03 → 31/10/03

Access to Document

10.1109/IMNC.2003.1268606

Cite this

Chen, H. L., Tu, C. W., Wang, T. J., Liu, P-T., Ko, F-H., & Chung, T. C. (2003). Porous materials with ultra-low dielectric constant as antireflective coating layers for F ² and ArF lithography. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 122-123). [1268606] (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268606

Chen, H. L. ; Tu, C. W. ; Wang, T. J. et al. / Porous materials with ultra-low dielectric constant as antireflective coating layers for F ² and ArF lithography. Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 122-123 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).

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abstract = "In this paper, optical characteristics of porous MSQ were measured for BARC applications. Optical constants of porous MSQ are (1.432, 0.004) and (1.245, 0.454) at 193 and 157 nm, respectively. For 157 nm, the porous MSQ film has suitable optical characteristics as a BARC layer.",

author = "Chen, {H. L.} and Tu, {C. W.} and Wang, {T. J.} and Po-Tsun Liu and Fu-Hsiang Ko and Chung, {T. C.}",

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booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",

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Chen, HL, Tu, CW, Wang, TJ, Liu, P-T , Ko, F-H & Chung, TC 2003, Porous materials with ultra-low dielectric constant as antireflective coating layers for F ² and ArF lithography. in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268606, Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003, Institute of Electrical and Electronics Engineers Inc., pp. 122-123, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 29/10/03. https://doi.org/10.1109/IMNC.2003.1268606

Porous materials with ultra-low dielectric constant as antireflective coating layers for F ² and ArF lithography. / Chen, H. L.; Tu, C. W.; Wang, T. J. et al.
Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 122-123 1268606 (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Chen HL, Tu CW, Wang TJ, Liu P-T , Ko F-H, Chung TC. Porous materials with ultra-low dielectric constant as antireflective coating layers for F ² and ArF lithography. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 122-123. 1268606. (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003). doi: 10.1109/IMNC.2003.1268606