Abstract
The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH4 and GeH4 gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.
Original language | English |
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Pages (from-to) | 4763-4765 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 25 |
DOIs | |
State | Published - 16 Dec 2003 |