Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Du Zen Peng*, Ting Chang Chang, Po Sheng Shih, Hsiao-Wen Zan, Tiao Yuan Huang, Chun Yen Chang, Po-Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH4 and GeH4 gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.

Original languageEnglish
Pages (from-to)4763-4765
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number25
DOIs
StatePublished - 16 Dec 2003

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