The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH4 and GeH4 gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 16 Dec 2003|