Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

Y. L. Chou; Ta-Hui Wang; Mercator Lin; Y. W. Chang; Lenvis Liu; S. W. Huang; W. J. Tsai; T. C. Lu; K. C. Chen; Chih Yuan Lu

doi:10.1109/LED.2016.2585860

Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

Y. L. Chou, Ta-Hui Wang^*, Mercator Lin, Y. W. Chang, Lenvis Liu, S. W. Huang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih Yuan Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.

Original language	English
Article number	7501605
Pages (from-to)	998-1001
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	8
DOIs	https://doi.org/10.1109/LED.2016.2585860
State	Published - 1 Aug 2016

Keywords

RTN
Vertical NAND
pass voltage
trap position

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10.1109/LED.2016.2585860

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title = "Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string",

abstract = "We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.",

keywords = "RTN, Vertical NAND, pass voltage, trap position",

author = "Chou, {Y. L.} and Ta-Hui Wang and Mercator Lin and Chang, {Y. W.} and Lenvis Liu and Huang, {S. W.} and Tsai, {W. J.} and Lu, {T. C.} and Chen, {K. C.} and Lu, {Chih Yuan}",

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doi = "10.1109/LED.2016.2585860",

language = "English",

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journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

AU - Chou, Y. L.

AU - Wang, Ta-Hui

AU - Lin, Mercator

AU - Chang, Y. W.

AU - Liu, Lenvis

AU - Huang, S. W.

AU - Tsai, W. J.

AU - Lu, T. C.

AU - Chen, K. C.

AU - Lu, Chih Yuan

PY - 2016/8/1

Y1 - 2016/8/1

N2 - We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.

AB - We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.

KW - RTN

KW - Vertical NAND

KW - pass voltage

KW - trap position

UR - http://www.scopus.com/inward/record.url?scp=84980385988&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2585860

DO - 10.1109/LED.2016.2585860

M3 - Article

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SN - 0741-3106

VL - 37

SP - 998

EP - 1001

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 7501605

ER -

Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

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Keywords

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