Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

Po Yi Kuo; Tien-Sheng Chao; Jyun Siang Huang; Tan Fu Lei

doi:10.1109/LED.2008.2011145

Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

Po Yi Kuo^*, Tien-Sheng Chao, Jyun Siang Huang, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 °C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.

Original language	English
Pages (from-to)	234-236
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	3
DOIs	https://doi.org/10.1109/LED.2008.2011145
State	Published - 12 Feb 2009

Keywords

Charge retention
Endurance
Ge nanocrystals (Ge-NCs)
Nonvolatile memory
Polycrystalline silicon thin-film transistors (poly-Si TFTs)
Programming/erasing

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10.1109/LED.2008.2011145

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title = "Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition",

abstract = "We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 °C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.",

keywords = "Charge retention, Endurance, Ge nanocrystals (Ge-NCs), Nonvolatile memory, Polycrystalline silicon thin-film transistors (poly-Si TFTs), Programming/erasing",

author = "Kuo, {Po Yi} and Tien-Sheng Chao and Huang, {Jyun Siang} and Lei, {Tan Fu}",

year = "2009",

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doi = "10.1109/LED.2008.2011145",

language = "English",

volume = "30",

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journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

AU - Kuo, Po Yi

AU - Chao, Tien-Sheng

AU - Huang, Jyun Siang

AU - Lei, Tan Fu

PY - 2009/2/12

Y1 - 2009/2/12

N2 - We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 °C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.

AB - We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 °C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.

KW - Charge retention

KW - Endurance

KW - Ge nanocrystals (Ge-NCs)

KW - Nonvolatile memory

KW - Polycrystalline silicon thin-film transistors (poly-Si TFTs)

KW - Programming/erasing

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DO - 10.1109/LED.2008.2011145

M3 - Article

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SN - 0741-3106

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EP - 236

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

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Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

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Keywords

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