Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement

Tien-Sheng Chao*, C. L. Lee, T. F. Lei, Y. T. Yen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.

Original languageEnglish
Pages (from-to)1144-1145
Number of pages2
JournalElectronics Letters
Issue number12
StatePublished - 4 Jun 1992


  • Elliposometry
  • Measurement
  • Thin films


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