Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement

Tien-Sheng Chao; C. L. Lee; T. F. Lei; Y. T. Yen

doi:10.1049/el:19920722

Poly-oxide/poly-Si/SiO₂/Si structure for ellipsometry measurement

Tien-Sheng Chao^*, C. L. Lee, T. F. Lei, Y. T. Yen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A multiple poly-oxide/poly-Si/SiO₂/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.

Original language	English
Pages (from-to)	1144-1145
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1049/el:19920722
State	Published - 4 Jun 1992

Keywords

Elliposometry
Measurement
Thin films

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10.1049/el:19920722

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@article{f1599e4428ba465d8eba64eb3de316fb,

title = "Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement",

abstract = "A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.",

keywords = "Elliposometry, Measurement, Thin films",

author = "Tien-Sheng Chao and Lee, {C. L.} and Lei, {T. F.} and Yen, {Y. T.}",

year = "1992",

month = jun,

day = "4",

doi = "10.1049/el:19920722",

language = "English",

volume = "28",

pages = "1144--1145",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "12",

}

TY - JOUR

T1 - Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement

AU - Chao, Tien-Sheng

AU - Lee, C. L.

AU - Lei, T. F.

AU - Yen, Y. T.

PY - 1992/6/4

Y1 - 1992/6/4

N2 - A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.

AB - A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.

KW - Elliposometry

KW - Measurement

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0027111577&partnerID=8YFLogxK

U2 - 10.1049/el:19920722

DO - 10.1049/el:19920722

M3 - Article

AN - SCOPUS:0027111577

SN - 0013-5194

VL - 28

SP - 1144

EP - 1145

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Poly-oxide/poly-Si/SiO₂/Si structure for ellipsometry measurement

Abstract

Keywords

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