Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

C. J. Lin; Y. S. Huang; N. Y. Li; Pei-Wen Li; K. K. Tiong

doi:10.1063/1.1405823

Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

C. J. Lin^*, Y. S. Huang, N. Y. Li, Pei-Wen Li, K. K. Tiong

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR)_spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [110]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz-Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region.

Original language	English
Pages (from-to)	4565-4569
Number of pages	5
Journal	Journal of Applied Physics
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.1405823
State	Published - 1 Nov 2001

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title = "Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure",

abstract = "We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR)_spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [110]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz-Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region.",

author = "Lin, {C. J.} and Huang, {Y. S.} and Li, {N. Y.} and Pei-Wen Li and Tiong, {K. K.}",

year = "2001",

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TY - JOUR

T1 - Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

AU - Lin, C. J.

AU - Huang, Y. S.

AU - Li, N. Y.

AU - Li, Pei-Wen

AU - Tiong, K. K.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR)_spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [110]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz-Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region.

AB - We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR)_spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [110]} dependence of the PR signals from the emitter region. The ordering related piezoelectric field is also found to influence the electric field, as evaluated from observed Franz-Keldysh oscillations, in the InGaP emitter region. The field in the emitter region is found to be about 25 kV/cm smaller than the theoretical value that does not take into account the possible ordering induced screening effect, while the field in the collector region agrees well with the theoretical value. In addition, the InGaAsN band gap is also determined by analyzing the PR spectrum of the base region.

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U2 - 10.1063/1.1405823

DO - 10.1063/1.1405823

M3 - Article

AN - SCOPUS:0035504384

SN - 0021-8979

VL - 90

SP - 4565

EP - 4569

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure

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