Polarized optical scattering measurements of nanoparticles upon a thin film silicon wafer

Cheng Yang Liu*, Tze An Liu, Wei En Fu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The diameter and distribution measurements of nanoparticles on wafers are critical parameters in the semiconductor industry to ensure the quality of the transistors and increase the production rate. A goniometric optical scatter instrument has been developed at CMS / ITRI to readily perform polarized light scattering measurements for the diameter and distribution measurements of nanoparticles on wafers. The designed scatter instrument is capable of distinguishing various types of optical scattering characteristics, which are corresponding to the diameters of the nanoparticles, near surfaces by using the Mueller matrix calculation. The measurement range of nanoparticle diameters is 50 nm to 350 nm on 4 inches to 8 inches thin film wafers. These results demonstrate that the polarization of light scattered by particles can be used to determine the size of particulate contaminants on silicon wafers.

Original languageEnglish
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages116-119
Number of pages4
DOIs
StatePublished - 2008
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: 18 Aug 200821 Aug 2008

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Country/TerritoryUnited States
CityArlington, TX
Period18/08/0821/08/08

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