Polariton lasing in a ZnO-based microcavity up to 353K

Ying Yu Lai*, Yu-Pin Lan, Si Wei Huang, Tien-chang Lu, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.

Original languageEnglish
Article number6348375
Pages (from-to)143-144
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
DOIs
StatePublished - 10 Oct 2012
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 7 Oct 201210 Oct 2012

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