Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon

Keyphrases

• Plasmonic Enhancement 100%
• Potential Fluctuations 100%
• Heavily Doped Silicon 100%
• Minority Carrier Injection 100%
• Plasmon 60%
• MOSFET 40%
• Band Broadening 40%
• Injection Experiment 40%
• Fin Field-effect Transistor (FinFET) 20%
• Valence Band Edge 20%
• Conduction Band Edge 20%
• Temperature Effect 20%
• Band Gap 20%
• Gaussian Distribution 20%
• Low Mobility 20%
• Calculation Results 20%
• Bipolar Transistor 20%
• Inversion Layer 20%
• Heavily Doped 20%
• Region of Interest 20%
• Bulk Semiconductors 20%
• Bulk Silicon 20%
• Induced Potential 20%

Engineering

• Minority Carriers 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Gaussians 33%
• Valence Band 33%
• Band Edge 33%
• Field Effect Transistor 33%
• Bipolar Transistor 33%
• Conduction Band 33%
• Nanoscale 33%
• Potential Application 33%
• Temperature Dependence 33%
• Region of Interest 33%
• Bulk Silicon 33%
• Good Approximation 33%

Material Science

• Silicon 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Field Effect Transistor 50%
• Theoretical Calculation 50%
• Bipolar Transistor 50%
• Bulk Silicon 50%