Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides

Keyphrases

• Capacitors 100%
• Ultrathin 100%
• Plasma-induced Damage 100%
• Nitrided Oxide 100%
• TiN Gate 100%
• Gate Leakage Current 66%
• Equivalent Oxide Thickness 33%
• Oxides 33%
• Post-annealing 33%
• Rapid Thermal Annealing 33%
• Effective Method 33%
• Charging Damage 33%
• Charge to Breakdown 33%
• Flat-band Voltage 33%
• Gate Oxide Integrity 33%
• Angstrom 33%
• Plasma Process 33%
• Temperature Affect 33%
• Interface State Density 33%
• Thermal Annealing Temperature 33%
• N2 Plasma 33%
• Post Deposition 33%
• Process Flow 33%
• Physical Damage 33%

Material Science

• Oxide Compound 100%
• Capacitor 100%
• Density 16%
• Annealing 16%