Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

C. C. Chen; Horng-Chih Lin; C. Y. Chang; Tien-Sheng Chao; S. C. Huang; W. F. Wu; T. Y. Huang; M. S. Liang

doi:10.1109/PPID.2000.870633

Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

C. C. Chen^*, Horng-Chih Lin, C. Y. Chang, Tien-Sheng Chao, S. C. Huang, W. F. Wu, T. Y. Huang, M. S. Liang

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

6 Scopus citations

Abstract

A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N₂O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N₂ plasma post-treatment is found to be effective in suppressing the gate leakage current.

Original language	English
Pages	117-120
Number of pages	4
DOIs	https://doi.org/10.1109/PPID.2000.870633
State	Published - 1 Dec 2000
Event	5th International Symposium on Plasma Process-Induced Damage - Santa Clara, CA, USA Duration: 23 May 2000 → 24 May 2000

Conference

Conference	5th International Symposium on Plasma Process-Induced Damage
City	Santa Clara, CA, USA
Period	23/05/00 → 24/05/00

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10.1109/PPID.2000.870633

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title = "Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide",

abstract = "A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N2O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N2 plasma post-treatment is found to be effective in suppressing the gate leakage current.",

author = "Chen, {C. C.} and Horng-Chih Lin and Chang, {C. Y.} and Tien-Sheng Chao and Huang, {S. C.} and Wu, {W. F.} and Huang, {T. Y.} and Liang, {M. S.}",

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doi = "10.1109/PPID.2000.870633",

language = "English",

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T1 - Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

AU - Chen, C. C.

AU - Lin, Horng-Chih

AU - Chang, C. Y.

AU - Chao, Tien-Sheng

AU - Huang, S. C.

AU - Wu, W. F.

AU - Huang, T. Y.

AU - Liang, M. S.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N2O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N2 plasma post-treatment is found to be effective in suppressing the gate leakage current.

AB - A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N2O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N2 plasma post-treatment is found to be effective in suppressing the gate leakage current.

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Y2 - 23 May 2000 through 24 May 2000

ER -

Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

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