Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

C. C. Chen; Horng-Chih Lin; C. Y. Chang; M. S. Liang; Chao-Hsin Chien; S. K. Hsien; T. Y. Huang

doi:10.1109/PPID.1999.798834

Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

C. C. Chen^*, Horng-Chih Lin, C. Y. Chang, M. S. Liang, Chao-Hsin Chien, S. K. Hsien, T. Y. Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Plasma-induced charging damage in various 3 nm-thick gate oxides (i.e., pure oxides and N₂O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Gate leakage current measurements indicated that large leakage current occurs at both the wafer center and the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices. These interesting observations could be explained by the polarity dependence of ultra-thin oxides in charge-to-breakdown characteristics. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage is significantly suppressed in N₂O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided-oxide is also found to be more robust when subjected to high temperature stressing.

Original language	English
Pages	141-144
Number of pages	4
DOIs	https://doi.org/10.1109/PPID.1999.798834
State	Published - 1 Dec 1999
Event	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: 9 May 1999 → 11 May 1999

Conference

Conference	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
City	Monterey, CA, USA
Period	9/05/99 → 11/05/99

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title = "Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides",

abstract = "Plasma-induced charging damage in various 3 nm-thick gate oxides (i.e., pure oxides and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Gate leakage current measurements indicated that large leakage current occurs at both the wafer center and the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices. These interesting observations could be explained by the polarity dependence of ultra-thin oxides in charge-to-breakdown characteristics. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage is significantly suppressed in N2O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided-oxide is also found to be more robust when subjected to high temperature stressing.",

author = "Chen, {C. C.} and Horng-Chih Lin and Chang, {C. Y.} and Liang, {M. S.} and Chao-Hsin Chien and Hsien, {S. K.} and Huang, {T. Y.}",

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doi = "10.1109/PPID.1999.798834",

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AU - Chen, C. C.

AU - Lin, Horng-Chih

AU - Chang, C. Y.

AU - Liang, M. S.

AU - Chien, Chao-Hsin

AU - Hsien, S. K.

AU - Huang, T. Y.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Plasma-induced charging damage in various 3 nm-thick gate oxides (i.e., pure oxides and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Gate leakage current measurements indicated that large leakage current occurs at both the wafer center and the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices. These interesting observations could be explained by the polarity dependence of ultra-thin oxides in charge-to-breakdown characteristics. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage is significantly suppressed in N2O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided-oxide is also found to be more robust when subjected to high temperature stressing.

AB - Plasma-induced charging damage in various 3 nm-thick gate oxides (i.e., pure oxides and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Gate leakage current measurements indicated that large leakage current occurs at both the wafer center and the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices. These interesting observations could be explained by the polarity dependence of ultra-thin oxides in charge-to-breakdown characteristics. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage is significantly suppressed in N2O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided-oxide is also found to be more robust when subjected to high temperature stressing.

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Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

Abstract

Conference

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