Plasma charging induced gate oxide damage during metal etching and ashing

Horng-Chih Lin; C. H. Perng; Chao-Hsin Chien; S. G. Chiou; T. F. Chang; T. Y. Huang; C. Y. Chang

doi:10.1109/PPID.1996.715215

Plasma charging induced gate oxide damage during metal etching and ashing

Horng-Chih Lin^*, C. H. Perng, Chao-Hsin Chien, S. G. Chiou, T. F. Chang, T. Y. Huang, C. Y. Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

Original language	English
Pages	113-116
Number of pages	4
DOIs	https://doi.org/10.1109/PPID.1996.715215
State	Published - 1996
Event	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA Duration: 13 May 1996 → 14 May 1996

Conference

Conference	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
City	Santa Clara, CA, USA
Period	13/05/96 → 14/05/96

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10.1109/PPID.1996.715215

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TY - CONF

T1 - Plasma charging induced gate oxide damage during metal etching and ashing

AU - Lin, Horng-Chih

AU - Perng, C. H.

AU - Chien, Chao-Hsin

AU - Chiou, S. G.

AU - Chang, T. F.

AU - Huang, T. Y.

AU - Chang, C. Y.

PY - 1996

Y1 - 1996

N2 - Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

AB - Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

UR - http://www.scopus.com/inward/record.url?scp=0029719005&partnerID=8YFLogxK

U2 - 10.1109/PPID.1996.715215

DO - 10.1109/PPID.1996.715215

M3 - Paper

AN - SCOPUS:0029719005

SP - 113

EP - 116

T2 - Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 13 May 1996 through 14 May 1996

ER -

Plasma charging induced gate oxide damage during metal etching and ashing

Abstract

Conference

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